High-Performance Silicon Nitride Ceramic Substrates for SiC & IGBT Modules
Silicon nitride (Si₃N₄) substrates from ADCERAX are available in both bare and AMB/DBC copper-metallized formats. Designed for high-power SiC and IGBT modules, they offer excellent thermal conductivity, mechanical strength, and electrical insulation, making them ideal for demanding power electronics.
Based in China with 20+ years of manufacturing experience, ADCERAX specializes in custom Si₃N₄ substrates, engineering support, and application solutions. We offer flexible dimensions, copper circuit design, low MOQ, and fast lead times to support both prototypes and mass production.
👉Ready to reduce failure rates and upgrade your power modules? Send us your drawing or request a quote today.
170–200 W/m·K
Thermal Conductivity
(Stable Heat Dissipation for SiC / IGBT)
Resists Cracking Under Thermal Cycling
Machining Tolerance
(Flatness & Thickness Control for AMB/DBC)
Compared to Al₂O₃ / AlN Substrates
What is silicon nitride substrate?
Silicon nitride substrate is a high-performance ceramic substrate made from hot-pressed or gas-pressure sintered Si₃N₄, specifically developed for power electronic packaging and thermal-mechanical reliability.
A silicon nitride ceramic substrate is not just a ceramic plate—it is a structural, thermal, and electrical foundation for modern high-efficiency power electronics. It enables higher power density, longer lifespan, and more compact SiC/IGBT module design.
Why Si₃N₄ Substrates are Replacing Al₂O₃ and AlN in Power Modules？
Unlike alumina or aluminum nitride substrates, silicon nitride substrates provide better resistance to cracking and thermal stress, making it widely used in SiC and IGBT power modules.
| Parameter | Si₃N₄ (Silicon Nitride) | Al₂O₃ (Alumina) | AlN (Aluminum Nitride) |
|---|---|---|---|
| Thermal Conductivity | 70–90 W/m·K | 20–30 W/m·K | 150–180 W/m·K |
| Fracture Toughness / Crack Resistance | ★★★★★ (High, resists cracking) | ★★☆☆☆ (Brittle) | ★★★☆☆ (Moderate) |
| Flexural Strength | 600–800 MPa | 300–400 MPa | 300–350 MPa |
| Thermal Expansion (CTE) | 2.8–3.2 ×10⁻⁶/K | 7–8 ×10⁻⁶/K | 4.5–5.3 ×10⁻⁶/K |
| Thermal Shock Resistance | Excellent | Poor | Moderate |
| Power Cycling Lifespan | >10,000 cycles | <1,000 cycles | 2,000–5,000 cycles |
| Typical Applications | SiC/IGBT power modules, EV inverters, wind & solar converters, industrial drives | Low-cost electronics, LED substrates, resistors | High thermal conductivity circuits, RF devices, heat spreaders |
Silicon Nitride (Si3N4) Substrate Properties
Silicon nitride substrates offer high bending strength, thermal shock resistance, low CTE, and reliable insulation, ensuring long-term performance in high-power SiC and IGBT modules.
Silicon Nitride Substrate Technical Sheet
| Si3N4 Type | Gas pressure sintering Si3N4 | Hot pressing sintering Si3N4 | High thermal conductivity Si3N4 |
| Density (g/cm3) | 3.2 | 3.3 | 3.25 |
| Flexture strength (MPa) | 700 | 900 | 600~800 |
| Young Modulus (GPa) | 300 | 300 | 300~320 |
| Poisson’s ratio | 0.25 | 0.28 | 0.25 |
| Compressive strength (MPa) | 2500 | 3000 | 2500 |
| Hardness (GPa) | 15 | 16 | 15 |
| Fracture toughness (MPa*m1/2) | 5~7 | 6~8 | 6~7 |
| Maximum working temperature (℃) | 1100 | 1300 | 1100 |
| Thermal conductivity (W/m*K) | 20 | 25 | 80~100 |
| Thermal expansion coefficient (/℃) | 3*10-6 | 3.1*10-6 | 3*10-6 |
| Thermal shock resistance (ΔT ℃) | 550 | 800 | / |
Advantages of Silicon Nitride Substrates
Withstands bending, soldering stress and assembly pressure better than Al₂O₃ and AlN; prevents substrate cracking in SiC/IGBT module packaging.
Maintains strength under rapid heating and cooling; survives >10,000 power cycles without delamination or solder fatigue in EV inverters and power converters.
Provides high dielectric strength (>15 kV/mm) and low dielectric loss, ensuring safe isolation in high-voltage and high-current circuits.
CTE matches copper and SiC chips (≈3×10⁻⁶/K), reducing solder joint cracking, substrate warpage, and improving bonding yield in mass production.
Silicon Nitride Substrate Products
ADCERAX supplies silicon nitride substrates in multiple formats, including bare Si₃N₄ ceramic plates, AMB/DBC copper-metallized substrates, laser-cut custom shapes, and multilayer bonded designs.
Silicon nitride substrates offer high bending strength and toughness, preventing cracks during soldering, pressing and thermal cycling in power module assembly.
- Crack-resistant under stress — Withstands soldering pressure and mechanical load.
- 600–800 MPa flexural strength — More durable than Al₂O₃ or AlN substrates.
- Reliable under power cycling — Maintains integrity over repeated heat and load cycles.
AMB silicon nitride substrates bond oxygen-free copper to Si₃N₄ ceramic using active metal brazing, creating a high-strength copper–ceramic circuit for power modules.
- Copper firmly bonded to Si₃N₄ — High peel strength, no delamination under heat or stress.
- Low thermal resistance path — Efficient heat transfer from chips to copper layer.
- Ideal for SiC / IGBT power modules — Supports high current, high voltage, and compact layouts.
🚀 Silicon Nitride Substrates– No Cracking, No Delamination, Higher Power Cycling Life.
Si₃N₄ substrates eliminate common module failures — cracking, delamination, overheating and solder fatigue. ADCERAX delivers custom AMB/DBC substrates with fast lead times and engineering support to ensure reliable SiC and IGBT module manufacturing.
Silicon Nitride Substrate Applications
Silicon nitride (Si₃N₄) substrates are widely used in power electronics, EV inverters, photovoltaic converters, and industrial automation systems where high thermal reliability and mechanical strength are critical. Their stability under repeated power cycling and precise flatness make them ideal for compact, high-density SiC and IGBT modules.
SiC/IGBT Power Modules
Application: Silicon nitride substrate for SiC MOSFET modules, IGBT half-bridge packages, DBC/AMB ceramic baseplates, power cycling test boards.
🧩 Key Advantages:
- 90 W/m·K thermal conductivity and >600 MPa strength support high-power SiC module packaging.
- Warpage ≤0.1 mm ensures consistent solder layers and chip bonding reliability.
- Survives >1×10⁶ thermal cycles (−40 °C to +175 °C) without ceramic cracking or delamination.
🔹Problem Solved:
A German power electronics manufacturer replaced alumina DBC with silicon nitride AMB substrates from ADCERAX. After 200 k thermal cycles, module failure rate dropped from 6.1% to 0.5%, solder fatigue was reduced by 92%, and production scrap decreased from 5.8% to 0.4%.
Industrial Inverter & Servo Drive Systems
Application: Silicon nitride ceramic substrate used in VFD inverters, servo drive modules, CNC welding inverters, electric motor control power boards.
🧩 Key Advantages:
- >600 MPa flexural strength prevents cracking under mechanical vibration and torque stress.
- CTE ≈ 3.0×10⁻⁶/K matches IGBT chips, reducing solder joint fatigue.
- Flatness ≤0.1 mm ensures proper thermal interface and low thermal resistance.
🔹Problem Solved:
- A Japanese automation company experienced frequent IGBT joint cracking on alumina substrates. After switching to ADCERAX silicon nitride substrates, inverter lifetime increased from 18 months to over 5 years, downtime reduced by 60%, and annual maintenance savings exceeded $40 000 per line.
Solar Inverter Power Stage
Application: Silicon nitride power module substrate used in photovoltaic inverters, DC/AC conversion boards, boost circuits, and grid-tied power modules.
🧩 Key Advantages:
- Dielectric strength >20 kV/mm ensures safe insulation in 1200–1700 V DC photovoltaic systems.
- Withstands >700 °C/s thermal shock during rapid load fluctuations.
- Copper peel strength >20 MPa improves long-term reliability of solder joints outdoors.
🔹Problem Solved:
- A European PV inverter OEM encountered ceramic cracking after 12 months of field use. Upgrading to ADCERAX Si₃N₄ DBC substrates increased MTBF by 3.4×, decreased solder failure rate by 85%, and warranty costs dropped by 47% across two production batches.
EV Power Inverters & OBC Systems
Application: Si₃N₄ ceramic substrate for EV traction inverters, SiC drive modules, onboard chargers (OBC), DC/DC converters, battery thermal control assemblies.
🧩 Key Advantages:
- Supports 175–200 °C junction temperature for high-efficiency SiC power modules.
- Thermal resistance <0.3 K/W boosts inverter power density by 12–15%.
- AMB copper peel strength >20 MPa withstands road vibration and thermal cycling.
🔹Problem Solved:
A Tier-1 EV system supplier adopted ADCERAX Si₃N₄ substrates to replace AlN. After 400,000 km road simulation, failure rate fell from 7.2% to 0.6%, inverter efficiency improved by 2.8%, and field return rate dropped by more than 70%.
Custom Silicon Nitride Substrate Manufacturer
ADCERAX specializes in custom silicon nitride substrates manufactured according to your drawings or circuit layouts. We support non-standard thicknesses, complex shapes, laser-cut holes, surface metallization (AMB/DBC), multi-layer bonding, and copper circuit patterns for power module packaging. Both prototype samples and mass production are available with consistent quality and on-time delivery.
Customization Options
Extra-large / Extra-small diameters, non-standard thicknesses, and ultra-long / ultra-short lengths.
Provide higher - level dimensional accuracy and concentricity control than the standard.
Flanges, steps, threads, drilling holes, grooves, etc.
Adjust the material according to the application requirements.
Polish and grind the surface to achieve a specific surface roughness.
Customization Process
Send us your drawing, CAD file, or physical sample with material grade, dimensions, tolerances, and quantity. Our engineers will evaluate the design and provide a detailed quotation with lead time and pricing.
Once the quote is approved, we proceed with sample prototyping (1–50 pcs) if needed, for testing and validation.
After sample approval or direct confirmation, we begin batch manufacturing using CNC machining, sintering, and polishing. All parts undergo dimensional checks, material purity testing, and surface finish inspection.
Finished products are securely packed and shipped via DHL/FedEx/UPS or your preferred method. We support global delivery with full documentation.
ADCERAX – Professional Silicon Nitride Substrate Supplier
ADCERAX is a China-based manufacturer of silicon nitride (Si₃N₄) substrates, offering custom and mass-production solutions for power electronics. With in-house sintering, copper metallization and precision machining, we ensure flatness, bonding reliability and stable delivery for prototypes and bulk orders.
Competitive pricing with strict quality control from raw material sourcing to final delivery
Professional team providing comprehensive technical support and collaborative design
Small batch orders to large-scale production with complex geometries and tight tolerances
24-hour response and 24-hour dispatch for standard items, 3-7 weeks for custom orders.
ADCERAX integrates Si₃N₄ substrate forming, metallization, precision machining, and quality inspection into a unified production system. We support custom thicknesses, copper circuit layouts (AMB/DBC), laser drilling, and tight tolerances—from prototypes to volume manufacturing.
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Precision Machining & Flatness Control:
Each Si₃N₄ substrate is processed through controlled sintering, grinding, and CNC machining to achieve accurate thickness, smooth surfaces, low warpage, and consistent bonding performance for module assembly. -
Batch Stability & Quality Assurance:
Every batch is tested for density, surface integrity, copper adhesion strength (if metallized), dielectric breakdown, and dimensional consistency—ensuring reliability under thermal cycling and power loading conditions. -
Customization & Engineering Support:
We provide drawing-based customization, including copper circuits, vias, edge chamfers, multi-layer bonding, and metallization patterns. Engineering support is available for SiC/IGBT module layouts, bonding requirements, or thermal simulation.
ADCERAX specializes in producing silicon nitride (Si₃N₄) substrates using advanced molding, high-temperature sintering, copper metallization (AMB/DBC), and precision grinding. Our substrates ensure high reliability in power module packaging with low warpage, strong mechanical integrity, and stable performance under thermal cycling and bonding processes.
| Manufacturing Capabilities Overview | |||
|---|---|---|---|
| Capability Item | Typical Value / Description | ||
| Material Grades | Hot-Pressed / Gas-Pressure Sintered Si₃N₄ substrates with high strength, fine-grain microstructure, and optimized for AMB/DBC copper bonding and thermal cycling applications. | ||
| Precision Machining | CNC grinding, laser cutting, and ultrasonic drilling for tight tolerances (±0.05 mm or better), low warpage (<0.1 mm), and smooth surfaces suitable for SiC/IGBT die bonding. | ||
| Forming & Shaping | Custom substrate sizes, stepped edges, chamfers, vias, cavities, and multi-layer laminations produced before metallization or bonding. | ||
| Flatness & Microstructure Control | Controlled sintering atmosphere, fine Si₃N₄ powders (<1 µm), and stress-relief grinding to maintain density, low porosity, and flatness for reliable module assembly. | ||
| Copper Metallization (AMB /DBC) | Active Metal Brazing (AMB) and Direct Bonded Copper (DBC) processes for bonding 0.2–0.8 mm copper layers; strong adhesion (>20 MPa), high thermal cycling durability, and customizable circuit patterns. | ||
FAQ
Yes. SiC devices operate at higher temperatures and switching frequencies. Silicon nitride substrates provide strong insulation, fast heat dissipation, and mechanical robustness, ensuring reliability in high temperature, high current, and high thermal cycling conditions.
We support Active Metal Brazing (AMB), Direct Bonded Copper (DBC), nickel/gold plating, silver metallization, and multi-layer copper circuits. Copper thickness ranges from 0.2–0.8 mm, with peel strength >20 MPa and strong resistance to thermal cycling.
Standard thicknesses are 0.25 mm, 0.32 mm, 0.38 mm, 0.5 mm, and 0.63 mm. Custom thickness from 0.2–2 mm is available. Maximum plate size typically reaches 140 × 190 mm (custom on request).
The material’s fracture toughness prevents micro-cracks during soldering and temperature swings. This reduces interface fatigue between copper, ceramic, and silicon chips, significantly improving power cycling life (10× longer than Al₂O₃ in many test conditions).
Yes. We accept Gerber, DXF, or STEP files to produce customized copper circuits, vias, cavities, stepped edges, or double-layer designs. Multilayer bonding of copper–ceramic–copper is also supported.
Typical failures include ceramic cracking, delamination, solder voids, and copper lift-off. Silicon nitride substrates reduces these risks with higher mechanical strength, low warpage, and strong copper adhesion.
To receive an accurate quotation, simply send us the following information:
Dimensions & Thickness（e.g. 38 × 50 × 0.32 mm）
Format Type：Bare Si₃N₄ / AMB copper / DBC copper / with metallization pattern
Drawing or Gerber File（PDF, DXF, STEP, or Gerber preferred）
Quantity：Prototype or batch production
Special Requirements（via holes, laser cutting, double-layer bonding, surface finish, etc.）
Send your request via Email (info@adcerax.com) or WhatsApp, and you’ll receive a quotation with pricing, lead time, and shipping options within 24 hours.
ADCERAX offers silicon nitride substrates for sale specifically for power electronics, supplying both bare and AMB/DBC metallized Si₃N₄ substrates with custom sizes, factory-direct pricing and engineering support.
📩 Interested? Send your drawings or size requirements to info@adcerax.com to get pricing and lead time within 24 hours.
We offer 0.2–0.8 mm copper for AMB and DBC substrates. The most common configurations are 0.3/0.3 mm and 0.3/0.2 mm, bonded to 0.25–0.32 mm Si₃N₄ ceramic. Thicker copper (up to 1.0 mm) is available for high-current power modules.
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info@adcerax.com
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