Custom Silicon Carbide Susceptor for Wafer Process Equipment

ADCERAX supplies custom silicon carbide susceptors for wafer process tools, PVD / ICP fixtures and high-temperature systems requiring stable heat transfer, controlled geometry and corrosion-resistant ceramic surfaces.

Each SiC susceptor can be reviewed based on your drawing, chamber layout, wafer size, pocket design, heating method, atmosphere and surface requirements.

Catalogue No. AT-THG-CZ1001
Material RBSiC / SSiC
Custom Geometry OD, thickness, pocket layout, grooves, holes and edge profile by drawing
Surface Requirement Ground, lapped or polished surface can be reviewed by application
Process Review Wafer size, chamber layout, heating method, atmosphere and inspection points should be confirmed before production
Engineering RFQ Review
Small-Batch Custom Support
Factory-Direct Manufacturing
Drawing & Process Review

What Is a Silicon Carbide Susceptor?

A silicon carbide susceptor is a high-temperature ceramic support component used to carry, heat or position wafers, substrates or workpieces inside thermal, deposition or plasma process equipment. In many systems, the susceptor helps transfer heat, maintain stable geometry and control the interaction between the workpiece, chamber atmosphere and process gas flow.

ADCERAX supplies drawing-based SiC susceptors for equipment builders, process engineers and industrial users who need custom diameter, thickness, pocket layout, mounting holes, grooves, surface finish or material selection. Before production, the operating temperature, atmosphere, plasma exposure, wafer size, loading method and dimensional tolerances should be reviewed together.

Engineering Design Factors for Custom SiC Susceptors

When selecting a custom silicon carbide susceptor, the most important question is not only the material name. The final design should match the heating method, chamber structure, wafer size, surface contact requirement and process atmosphere.

Thermal response affects how quickly the susceptor reaches a stable temperature and how evenly heat is transferred across the supported area. For multi-pocket or large-diameter designs, heat distribution and local thermal gradients should be reviewed together.

Geometry stability is critical when repeated heating and cooling cycles may cause stress around pockets, edges, holes or thin sections. Flatness, concentricity, pocket depth and edge profile should be defined according to the equipment interface.

Surface condition influences wafer seating, gas-flow behavior and particle control. Depending on the application, the surface may require grinding, polishing, controlled roughness or non-contact areas to reduce unwanted interaction.

Atmosphere and plasma exposure should be reviewed before material selection. Halogen, ammonia, oxygen, vacuum or reactive gas environments may require different SiC grades, surface preparation or design allowances.

Technical Specifications of Multi-Pocket Silicon Carbide Susceptor

The following specifications summarize key review points for custom silicon carbide susceptors. Final values should be confirmed according to material route, geometry, operating atmosphere, surface requirement and inspection method.

Property Specification
Material Route RBSiC / SSiC, reviewed according to operating temperature, atmosphere, plasma exposure and geometry.
Custom Geometry Outer diameter, thickness, pocket layout, grooves, holes, steps and edge profile can be made according to drawing.
Pocket Layout Single-pocket, multi-pocket, grooved or custom cavity design for wafer seating and heat distribution.
Surface Flatness Defined according to wafer size, support method and machining feasibility.
Surface Roughness Typical Ra 0.4–0.8 μm; ground, lapped or polished surface can be reviewed by application.
Density Typical 3.05–3.15 g/cm³, depending on SiC material route and production process.
Hardness HV > 2500, supporting wear resistance and long-term surface stability.
Thermal Conductivity Typical 120–180 W/m·K, depending on material grade and structure.
Coefficient of Thermal Expansion 4.0–4.5 × 10⁻⁶ /K, helping reduce thermal mismatch during heating cycles.
Maximum Service Temperature Up to 1200°C, depending on atmosphere, loading condition and design structure.
Thermal Shock Resistance Suitable for repeated heating and cooling cycles; exact performance should be reviewed by geometry and process condition.
Plasma / Chemical Resistance Can be reviewed for halogen, ammonia, acid, alkali, vacuum or reactive gas environments.
Electrical Resistivity Typical 10⁵–10⁶ Ω·cm, depending on material route and process condition.

Dimensions of Multi-Pocket Silicon Carbide Susceptor

size for substrate

Silicon Carbide Susceptor for PVD
Item No. Outer Diameter(mm) Thickness(mm) Purity(%)
AT-THG-CZ1001 230 3 99
AT-THG-CZ1002 300 1.4 99
AT-THG-CZ1003 300 3 99
AT-THG-CZ1004 330 1.4 99
AT-THG-CZ1005 330 3 99

 

Silicon Carbide Susceptor for ICP
Item No. Outer Diameter(mm) Thickness(mm) Purity(%)
AT-THG-CZ2001 300 3 99
AT-THG-CZ2002 300 4.4 99
AT-THG-CZ2003 330 4.4 99
AT-THG-CZ2004 330 3 99
AT-THG-CZ2005 380 4.4 99
AT-THG-CZ2006 380 3 99

RBSiC, SSiC and SiC-Coated Graphite Susceptor Selection

ADCERAX can review different silicon carbide susceptor material routes according to the process requirement. The right option depends on the chamber environment, dimensional design, thermal mass, surface requirement and budget.

Material Route When It May Fit Buyer Should Confirm
RBSiC Susceptor Suitable for larger structural ceramic parts where thermal shock resistance, shape stability and cost control are important. Operating temperature, geometry size, load condition and atmosphere.
SSiC Susceptor Suitable for dense, wear-resistant and corrosion-resistant applications requiring stronger surface stability. Tolerance, surface finish, plasma exposure and cleaning method.
SiC-Coated Graphite Susceptor Often used where graphite thermal response and SiC coating protection are required. Coating thickness, purity, coating uniformity and reactor compatibility.

Recommended note:
If the application involves wafer-contact semiconductor processing, coating purity, contamination control or equipment-specific qualification, ADCERAX should review the requirement before confirming the material route or public claim.

Packaging for Multi-Pocket Silicon Carbide Susceptor

Multi-Pocket Silicon Carbide Susceptor is packaged using a multilayer protection system that prevents vibration, impact, and moisture intrusion during international transport. Each unit is first wrapped in anti-scratch paper and bubble film, then secured within a foam-lined carton to stabilize all cavity areas. For long-distance shipments, the carton is reinforced inside a wooden crate to ensure structural safety throughout handling and loading processes.

ADCERAX® Packaging of Silicon Carbide Susceptor

Applications of Custom Silicon Carbide Susceptors

Custom silicon carbide susceptors are used in high-temperature, plasma and thermal process equipment where wafer seating, heat transfer, surface condition and dimensional stability need to be reviewed together.

  • MOCVD / LED Epitaxy Fixtures

    In MOCVD and LED epitaxy equipment, the susceptor must support stable wafer positioning while helping maintain uniform thermal behavior across the loading area. Pocket geometry, wafer seating, gas-flow path and surface condition can influence film uniformity and process repeatability.

    ADCERAX can review multi-pocket SiC susceptor designs according to wafer size, pocket count, cavity depth, heating method and chamber interface. For sensitive epitaxy applications, coating route, material purity and contamination-control requirements should be confirmed before quotation.

  • PVD / ICP Process Carriers

    In PVD and ICP systems, the susceptor or carrier may be exposed to plasma, ion bombardment, temperature cycling and repeated loading. Material density, pocket-edge durability, surface finish and dimensional stability are important for reducing fixture-related variation.

    ADCERAX supports custom SiC carriers with controlled diameter, thickness, mounting features, grooves and surface preparation. The design should be reviewed against plasma chemistry, cleaning method, substrate size and expected loading cycle.

  • RTA and Vacuum Thermal Processing

    For rapid thermal annealing, vacuum heating and high-temperature material processing, the susceptor must maintain stable geometry during repeated hot–cold cycles. Thermal mass, flatness, edge design and support-point layout can affect temperature response and part stability.

    ADCERAX can produce drawing-based SiC thermal platforms for equipment assemblies, test fixtures and custom processing tools. Before production, the heating ramp, atmosphere, fixture contact area and maximum part dimensions should be reviewed.

  • Custom High-Temperature Equipment Fixtures

    Silicon carbide susceptors can also be used as custom heating platforms, support plates or process carriers in high-temperature industrial equipment. These designs often require non-standard shapes, holes, grooves, steps, thin sections or controlled contact surfaces.

    ADCERAX reviews custom requirements based on drawing, application temperature, load, atmosphere, tolerance and inspection requirements.

Handling and Operation Guidelines for Silicon Carbide Susceptors

Silicon carbide susceptors should be handled, installed and cleaned with care to protect pocket geometry, surface condition and dimensional stability during thermal or plasma process use. The following guidelines help reduce handling damage, contamination and process-related surface variation.

  • Pre-Use Inspection

    Before installation, inspect the susceptor surface, pocket edges, holes and mounting areas under clean lighting. Remove visible particles or residues with approved non-abrasive wipes. Do not use sharp tools, abrasive pads or hard metal contact on functional surfaces.

  • Handling and Loading

    Handle the SiC susceptor with clean gloves and support it evenly during transfer. Avoid impact, edge contact or uneven lifting, especially around thin sections, pockets, grooves and mounting holes. When loading wafers, substrates or workpieces, confirm that each seating area is clean and properly aligned.

  • Installation and Alignment

    Check that the susceptor matches the chamber interface before tightening fixtures, clamps or support points. Pocket position, flatness, hole alignment and contact surfaces should be confirmed before heating. Uneven mounting may create local stress or affect heat distribution.

  • Thermal Operation

    Use controlled heating and cooling procedures based on the equipment process. Avoid sudden temperature shock, direct quenching or rapid handling immediately after high-temperature exposure. For new designs, a process qualification run is recommended before continuous use.

  • Cleaning and Storage

    After use, allow the susceptor to cool under controlled conditions before cleaning. Use non-abrasive cleaning methods suitable for the process environment. Store the component in clean, dry and protected packaging to prevent particle adhesion, surface scratches or edge damage.

Silicon Carbide Susceptor FAQs

  1. Q1: What is a silicon carbide susceptor used for?

    A silicon carbide susceptor is used to support, heat or position wafers, substrates or workpieces inside high-temperature, deposition, plasma or thermal process equipment. It helps maintain stable heat transfer, controlled geometry and surface interaction during processes such as MOCVD, PVD, ICP, RTA and vacuum thermal treatment.

  2. Q2: Can ADCERAX customize SiC susceptors according to equipment drawings?

    Yes. ADCERAX can review custom SiC susceptor drawings for outer diameter, thickness, pocket layout, holes, grooves, steps, edge profile, surface finish and inspection requirements. The final design should be confirmed according to the chamber interface, wafer size, loading method, operating temperature and atmosphere.

  3. Q3: How should I choose between RBSiC, SSiC and SiC-coated graphite susceptors?

    RBSiC may fit larger structural designs that need thermal shock resistance and cost control. SSiC is often selected when higher density, wear resistance and corrosion resistance are required. SiC-coated graphite is commonly considered when graphite thermal response and SiC coating protection are both needed. The best option should be reviewed based on process temperature, plasma exposure, purity requirement, geometry and budget.

  4. Q4: What information is needed before quoting a custom silicon carbide susceptor?

    A quotation should include the drawing, wafer or substrate size, equipment type, operating temperature, atmosphere or plasma chemistry, target surface finish, tolerance requirements, quantity and any inspection requirements. These details help confirm whether the geometry and material route are suitable before production.

  5. Q5: Are silicon carbide susceptors suitable for MOCVD, PVD, ICP and RTA systems?

    Silicon carbide susceptors can be used in many high-temperature wafer support, plasma processing and thermal treatment systems, including MOCVD, PVD, ICP and RTA equipment. Suitability depends on the chamber design, process gas, temperature cycle, wafer contact condition and required dimensional stability.

  6. Q6: How should a silicon carbide susceptor be handled and cleaned?

    A SiC susceptor should be handled with clean gloves, protected from impact and cleaned with non-abrasive methods suitable for the process environment. Abrasive pads, sudden cooling and uncontrolled handling should be avoided because they may affect pocket geometry, surface condition or thermal stability.

Information Needed for a Silicon Carbide Susceptor Quote

To help ADCERAX review your SiC susceptor requirement faster, please provide the following information:

RFQ Information Why It Matters
Drawing or sample photo Confirms outer diameter, thickness, pocket layout, holes and edge geometry.
Wafer or substrate size Helps define pocket size, seating clearance and contact area.
Equipment type MOCVD, PVD, ICP, RTA, vacuum furnace or custom process tool may require different design priorities.
Operating temperature Supports material route and thermal stress review.
Atmosphere or plasma chemistry Helps evaluate SiC grade, coating need and surface stability.
Surface finish requirement Affects wafer contact, cleaning behavior and friction.
Tolerance and inspection points Helps confirm machining feasibility before quotation.
Quantity and delivery expectation Helps review prototype, small-batch or repeat production planning.
customize size

Customization Services for SiC Susceptor

ADCERAX customizes silicon carbide susceptors by drawing, sample or chamber interface, with wafer size, pocket layout, OD, thickness, holes, grooves, edge profile and surface finish reviewed before production.

Geometry customization may include single-pocket, multi-pocket, flat plate, grooved plate, stepped profile, drilled holes, counterbores and special edge features.

Surface customization may include ground, lapped or polished surfaces depending on wafer contact, gas-flow behavior, cleaning method and friction requirement.

Material selection can be reviewed between RBSiC, SSiC or SiC-coated graphite according to temperature, atmosphere, thermal response, plasma exposure and dimensional feasibility.

Inspection support can include dimensional check, visual surface review, flatness check and packaging confirmation before shipment.

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